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2SB1182D
PNP Silicon Elektronische Bauelemente
General Purpose Transistor
TO-252
6. 50 0. 15 0. 10 2. 30 0. 51 0. 05 0. 10
FEATURES
The 2SB1182DX is designed for medium power amplifier application
0. 20 0. 10
5. 30
C Low collector saturation voltage: VCE(sat)=-0.5V (Typ.)
RoHS Compliant Product
5
0. 51 0
0. 10 1. 20
9. 70
0. 75
0. 10 5 5
1. 60
B
O
C
E
0. 51
* MAXIMUM RATINGS* TA=25 C unless otherwise noted
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current -Pulse,Pw=100mS Collector Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC IC PC TJ, Tstg Value -40 -32 -5 -2 -2 10 +150,-55~+150 Units V V V A A W
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions MIN -40 -32 -5 -1 -1 82 -500 100 50 390 -800 V MHz pF TYP MAX UNIT V V V uA uA
Ic=-50A, IE=0 Ic= -1mA,IB=0 IE= -50A, IC=0 VCB=-20V,IE=0 VEB=-4V,IC=0 VCE=-3V,IC=-500mA IC=-500mA,IB=-200mA VCE=-5V,Ic=500mA,f=100MHz VCB=-10V,f=1MHz
CLASSIFICATION OF
Rank Range
http://www.SeCoSGmbH.com
hFE P
82 - 180
Q
120 - 270
R
180 - 390
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
2. 70
MARKING : 1182 (With Date Code)
0. 15
0. 6
0 9
0. 80
0. 10
2. 30
0. 10
0. 60 2. 30
0. 10 0. 10
0. 20
5. 50
0. 10
2SB1182D
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
Electrical characteristic curves
01-Jun-2002 Rev. A
Page 2of 2

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